Doctorates' Information System

     Shubhankar Majumdar

Ph.D. fromIndian Institute of Technology, Kharagpur - Advanced Technology Development Centre
Supervisor(s)  Prof. Dhrubes Biswas
Ph.D. status  Joined in 2013 :: Completed in 2016
AddressRoom.No. E-207, JCB Hall of Residence, IIT KGP
Phone9564470184
Emailshubhankar.majumdar@atdc.iitkgp.ernet.in
Formal Education
Exam / Degree Board / UnivBranchYear
10M.P.BoardMaths and Science2003
12M.P.BoardPhysics, Chemistry and Maths2005
BEU.I.T / RGPVElectronics and Communication2010
M.Tech.S.G.S.I.T.S / RGPVMicroelectronics and VLSI Design2012

Research Areas
  • Design of RF Frontend using III - V Semiconductors

Skills
  • Cadence (Spectre and Virtuoso)
  • Advanced Design System (ADS)
  • HSpice
  • Tanner (S-edit, W-edit, L-edit and TSpice)
  • Silvaco (Atlas and Athena)
  • Photolithography (working with OAI-200 mask aligner)
  • Spin coating
  • Hall measurement (Accent HL5500PC)
  • DC characterization (Keithley 4200SCS)
  • RF characterization

Awards
  • International Travel Grant from MHRD to visit Warsaw, Poland
  • Won 25 lac in India Innovation Challenge Design Contest (IICDC) 2016

Teaching Experience
  • Device Modeling(L) at IIT Kharagpur ( VLSI Summer Course ) 15th May to 17th June (1 terms)

Fellowships / Scholarships
  • GATE Scholarship in 2010
  • IIT KGP Institute Scholarship

Papers Published in Journals
  • Performance Variability Projection of InGaN/AlGaN/GaN E-mode HEMT for RF Switch Application by Shubhankar Majumdar, Dhrubes Biswas ECS Solid State Letter 4(10), pp no. P72-P74 (2015)
  • Implementation Of VerilogA GaN HEMT Model To Design RF Switch by Shubhankar Majumdar, Ankush Bag, Dhrubes Biswas Microwave and Optical Technology Letters 57, pp no. 1765-1768 (2015)
  • Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures by S. Das, S. Majumdar, R. Kumar, S. Ghosh, D. Biswas Scripta Materialia 113, 39-42 (2016)
  • 2DEG modulation in double quantum well enhancement mode nitride HEMT by Ankush Bag, Palash Das, Rahul Kumar, Partha Mukhopadhyay, Shubhankar Majumdar, Sanjib Kabi, Dhrubes Biswas Physica E Low-dimensional Systems and Nanostructures 74, 59 (2015)
  • A Novel Sequence Generator Replacing LFSR For Hardwired BIST Of SRAM by Shubhankar Majumdar, Muhammad Khalid International Journal of Engineering Research and Applications vol. 2, pp..822-826 (2012)

Papers Presented at Conferences
  • Utilization of Support Vector Machine in determining the optimum operating temperature of ternary III-Arsenide alloys grown by MBE by Shubhankar Majumdar, Rahul Kumar, Subhashis Das, Mihir Mahata, Dhrubes Biswas European Material Research Society (EMRS) Fall Meeting N, 4 - 6 (2015)
  • Artificial neural network modelling of ADS designed Double Pole Double Throw switch by S.Majumdar, M.Zuhair, D.Biswas 18th International Symposium on VLSI Design and Test 10.1109/ISVDAT.2014.6881066 (2014)
  • Barrier layer engineering- Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT by Shubhankar Majumdar, Subhashis Das, Dhrubes Biswas Advanced Materials and Radiation Physics (AMRP-2015) 10.1063/1.4929179 (2015)
  • Cap layer Engineering - Performance Evaluation of E-Mode InGaN/AlGaN/GaN HEMT by Shubhankar Majumdar, Palash Das, Dhrubes Biswas National Conference on Devices and Circuits 10.13140/2.1.3669.3280 (2015)
  • Simplified Gas Sensor Model Based On AlGaN/GaN Heterostructure Schottky Diode by Subhashis Das, Shubhankar Majumdar, Rahul Kumar, Apurba Chakraborty, Ankush Bag, Dhrubes Biswas Advanced Materials and Radiation Physics (AMRP-2015) 10.1063/1.4929172 (2015)
  • Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode by S. Das, Shubhankar Majumdar, R. Kumar, M. Mahata, S.M. Dinara, Dhrubes Biswas IEEE 2nd International Conference on Emerging Electronics (ICEE) 10.1109/ICEmElec.2014.7151192 (2014)
  • Hardwired BIST Architecture of SRAM by Shubhankar Majumdar and Prashant Bansod 11th Indicon 10.1109/INDICON.2014.7030466 (2014)
  • Acetone sensing in AlGaN/GaN heterostructure on Si (111) A Schottky diode sensor by S.Das, R.Kumar, Shubhankar Majumdar, M. Mahata, S.Ghosh, Dhrubes Biswas European Material Research Society (EMRS) Fall Meeting O, 24-26 (2015)
  • Designing of Control Logic Circuit for SRAM Memory Cell by Shubhankar Majumdar, Deepti Malviya, Mayank Mishra , P.P. Bansod International Conference on Information, Communication and Embedded System vol-1, pp. 375-381 (2012)
  • Design Of SRAM Cell In 0.18 mm Technology by Mayank Mishra, Shubhankar Majumdar, Deepti Malviya, P.P. Bansod International Conference on Information, Communication and Embedded System vol-1, pp. 457-463 (2012)
  • Comparative Study on Implementation of Various Decoder Architecture. by Deepti Malviya, Shubhankar Majumdar, Mayank Mishra and P.P. Bansod International Conference on Information, Communication and Embedded System vol. 2, pp. 68-74 (2012)
  • Temperature dependent etching of Gallium Nitride layers grown by PA -MBE by Shubhankar Majumdar, S. Shaik, S. Das, R. Kumar, A. Bag, A. Chakraborty, M. Mahata, S. Ghosh, D. Biswas International Conference on Microwave and Photonics (ICMAP-2015) 1-2 (2015)
  • Determination of Polarity and Defect Density via Molten KOH Etching of MBE Grown AlN Layer on Si (111). by Shubhankar Majumdar, S Shaik, S. Ghosh, D. Biswas International Workshop on the Physics of Semiconductor Devices (IWPSD) 66 (2015)
  • Trapping Characteristics Comparison between AlGaN/InGaN/GaN and AlGaN/GaN Heterostructure by Conductance Measurement by A.Chakraborty, P. Mukhopadhyay, S. Ghosh, S. Dinara, A. Bag, M. K Mahata, R. Kumar, S. Das, Shubhankar Majumdar, D. Biswas International Workshop on the Physics of Semiconductor Devices (IWPSD) 22 (2015)
  • Effect of Different Metal Modulation Scheme and Growth Temperature in InGaN Growth. by A.Chakraborty, P. Mukhopadhyay, S.Ghosh, A. Bag, S. Jana, S. M. Dinara, M Mahata, R. Kumar, S. Das, Shubhankar Majumdar, P. Das, D. Biswas International Conference on Microwave and Photonics (ICMAP-2015) 1-2 (2015)
  • Electrical Degradation Mechanism of GaN High Electron Mobility Transistors on Silicon and Sapphire under OFF-state Stress by Saptarsi Ghosh, Subhashis Das, Partha Mukhopadhyay, Ankush Bag, Shubhankar Majumdar, Dhrubes Biswas MRS Fall Meeting 2015, Boston, Massachusetts RR (2015)
  • Role of Bulk Traps on Intermodulation Distortion of AlGaN/GaN HEMT. by A. Bag, P.Mukhopadhyay, Shubhankar Majumdar, D. Biswas MRS Fall Meeting 2015, Boston, Massachusetts RR (2015)
  • Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement by A. Chakraborty, S.Ghosh, P. Mukhopadhyay, S. M. Dinara, A. Bag, M.K.Mahata, R. Kumar, S. Das, S. K .Jana, Shubhankar Majumdar, D.Biswas MRS Fall Meeting 2015, Boston, Massachusetts RR (2015)

Indian Institute of Technology, Kharagpur-721 302, INDIA
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