Doctorates' Information System

     Pranab Biswas

Ph.D. fromINDIAN INSTITUTE OF TECHNOLOGY KHARAGPUR - Materials Science Centre
Supervisor(s)  Prof. Pallab Banerji
Ph.D. status  Joined in 2010 :: Completed in 2014
AddressDepartment of Materials Science and Engineering, Yonsei University, Seoul 120749, S Korea
Phone9903144730
Emailpranabiitkgp2010@gmail.com
Formal Education
Exam / Degree Board / UnivBranchYear
12WBCHSEScience2001
B.Sc.Calcutta UniversityPhysics Honors (PCM)2004

Research Areas
  • Sensor devices for environmental monitoring
  • Non-conventional energy
  • Light emitting diode
  • UV photodetectors
  • Low temperature charge transport
  • Defects in wide bandgap semiconductors

Skills
  • MOCVD growth of II-VI and II-V materials
  • Other film deposition techniques - Thermal evaporation, spin coating.
  • Electrical characterizations (I-V, C-V etc.) using Keithley 4200
  • UV-VIS-NIR Spectroscopic measurement
  • Other characterization techniques - XPS, FESEM, HRTEM, XRD
  • Low temperature Hall measurements
  • Low temperature photoluminescence

Awards
  • CSIR-JRF, Dec 2009 (Rank 33/264)

Teaching Experience
  • Direct and indirect bandgap determination using optical absorption spectroscopy(P) at IIT Kharagpur Till date (2 terms)

Fellowships / Scholarships
  • Council of Scientific and Industrial Research - Individual Research Fellowship (JRF and SRF)

Papers Published in Journals
  • Super rapid response of humidity sensor based on MOCVD grown ZnO nanotips array by Pranab Biswas, Souvik Kundu, P. Banerji, S. Bhunia Sensors and Actuators B 178, 331 (2013)
  • A study on electrical transport vis-a-vis the effect of thermal annealing on the p-type conductivity in arsenic-doped MOCVD grown ZnO in the temperature range 10 - 300 K by Pranab Biswas, Souvik Kundu, P. Banerji Journal of Alloys and Compounds 552, 304 (2013)
  • Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation by Pranab Biswas, NN Halder, S Kundu, P Banerji, T Shripathi, M Gupta AIP Advances 4, 057108 (2014)
  • Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique by Nripendra N. Halder, Pranab Biswas, B. Nagabhushan, Souvik Kundu, D. Biswas, and P. Banerji Journal of Applied Physics 115, 203719 (2014)
  • Charge storage properties of InP quantum dots in GaAs metal-oxidesemiconductor based nonvolatile flash memory devices by S. Kundu, N. N. Halder, Pranab Biswas, D. Biswas, P. Banerji, Rabibrata Mukherjee, and S. Chakraborty APPLIED PHYSICS LETTERS 101, 212108 (2012)
  • GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots by Souvik Kundu, S. R. Gollu, R. Sharma, N. N. Halder, Pranab Biswas, P. Banerji, and D. Gupta Journal of Applied Physics 114, 084509 (2013)
  • Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si by Nripendra N Halder, Pranab Biswas, Tushar Dhabal Das, Sanat Kr Das, S Chattopadhyay, D Biswas, P Banerji Journal of Applied Physics 115, 043101 (2014)
  • Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition by Nripendra N Halder, Pranab Biswas, P Banerji, Souvik Kundu, B Nagabhushan, Krishnendu Sarkar, Sisir Chowdhury, Arunava Chaudhuri APPLIED PHYSICS LETTERS 106, 012103 (2015)
  • An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO by Pranab Biswas, Palash Nath, Dirtha Sanyal, Pallab Banerji Current Applied Physics -- (2015)
  • Au-p-Si Schottky junction solar cell- Effect of barrier height modification by InP quantum dots by Nripendra N Halder, Pranab Biswas, Souvik Kundu, P Banerji Solar Energy Materials and Solar Cells 132, 230-236 (2015)
  • Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection by Souvik Kundu, Michael Clavel, Pranab Biswas, Bo Chen, Hyun-Cheol Song, Prashant Kumar, Mantu K. Halder, Nripendra N., Hudait, Pallab Banerji, Mohan Sanghadasa, Shashank Priya Scientific Reports (Nature) 5, 12415 (2015)
  • InAs quantum dots as charge storing elements for applications in flash memory devices by Sk Masiul Islam, Pranab Biswas, P Banerji, S Chakraborty Materials Science and Engineering- B 198, 102-107 (2015)

Papers Presented at Conferences
  • Effect of nanosize on photoconductivity of sol-gel grown ZnO (ORAL) by Pranab Biswas and P. Banerji International Workshop on Surface Science and Engineering (IWSSE - 2013) -- (2013)
  • Varying Photoconductivity of ZnO as a Function of Annealing Temperature by Pranab Biswas, P. Banerji IWPSD, Amity University 10.1007/978-3-319-03002-9_211 (2013)
  • Anomalous conduction behavior vis-a-vis the charge compensation mechanism in annealed ZnO/SI-GaAs by Pranab Biswas, Nripendra N. Halder, P. Banerji Materials Molecular Meeting, IMRE, SINGAPORE, Advanced Materials Technology ORAL presentation (2014)
  • High temperature transport in MOCVD grown p-type ZnO by Pranab Biswas, P. Banerji International Workshop on Zinc Oxide (IWZNO) AACROPOLIS, NICE, FRANCE (2012)

Indian Institute of Technology, Kharagpur-721 302, INDIA
Telephone Number +91-3222-255221 | FAX : +91-3222-255303