Doctorates' Information System

     Rakesh Aluguri

Ph.D. fromIIT Kharagpur - Physics and Meteorology
Supervisor(s)  Prof. S.K. Ray
Ph.D. status  Joined in 2009 :: In progress
AddressRoom No. B-217, JCB Hall, IIT Kharagpur
Phone7501953202
Emailaluguri@phy.iitkgp.ernet.in
Formal Education
Exam / Degree Board / UnivBranchYear
M.Tech.Indian Institute Of Technology, KharagpurPhysics with Solid State Technology2009
M.Sc.Osmania University, Andhra PradeshPhysics with Electronics and Instrumentation2007
B.Sc.Kakatiya University, WarangalMaths, Physics and Computer Science2005
12Board of Intermediate Education, Andhra PradeshMaths, Physcis and Chemistry2002
10Board of Secondary Education, Andhra PradeshArts and Science2000

Research Areas
  • Semiconductor nano structures
  • Carbon nano tube/ semiconductor nano hetero structures

Skills
  • Expert in working with PANANALYTICAL XRD system
  • Expert in working with VEECO STM system
  • Skilled in C, Cpp programming languages
  • Expert in working with rf and DC sputtering systems
  • Expert in working with Molecular Beam Epitaxy system
  • Operating experience of Raman Spectroscopy system T-64000 (Jobin Yvon Horiba, France)

Awards
  • Received Silver medal for the perfomance in M.Tech. from IIT Kharagpur
  • CSIR JRF - 2008
  • Gate - 2007

Teaching Experience
  • Waves and Oscillations(T) at Indian Institute of Technology Kharagpur 6 months (2 terms)
  • Condensed matter physics(P) at Indian Institute of Technology Kharagpur 6 months (3 terms)
  • B. Tech physics Lab(P) at Indian Institute of Technology Kharagpur 6 months (6 terms)
  • Electronics Lab(P) at Indian Institute of Technology Kharagpur 6 months (1 terms)
  • Optics Lab(P) at Indian Institute of Technology Kharagpur 6 months (1 terms)

Fellowships / Scholarships
  • CSIR JRF fellowship

Papers Published in Journals
  • Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si by R. Aluguri, S. Das, R.K. Singha, S.K. Ray Current Applied Physics 13, 12-17 (2013)
  • Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots by S. Das, S. Manna, R. K. Singha, R. Aluguri, and S. K.Ray Journal of Applied Physics 113, 063101 (2013)
  • Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix by R. Aluguri, S. Das, S. Manna, R.K. Singha, S.K. Ray Optical Materials  34, 1430-1433 (2012)
  • Optical and electrical properties of undoped and doped Ge nanocrystals by , S. Das, R. Aluguri, S. Manna, R. K. Singha, A. Dhar, L. Pavesi and S. K. Ray Nanoscale Research Letters 7, 143 (2012)
  • Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices by A. Bag, R. Aluguri, S. K. Ray J. Nano- Electron. Phys 3 , 878 (2011)
  • Dielectric and transport properties of carbon nanotube- cadmium sulfide nanostructures embedded in polyvinyl alcohol matrix by S.P. Mondal, R. Aluguri and S. K. Ray Journal of Applied Physics 105,114317 (2009)

Papers Presented at Conferences
  • Self-assembled Ge islands for quantum dot infrared photodetectors and single hole charging devices by R. Aluguri, R. K. Singha, S. Manna and S. K. Ray International Conference on Nanoscience and Technology (ICONSAT - 2012) 179 (2012)
  • Germanium Nanocrystals embedded in Silicon dioxide for Floating Gate Memory Devices by A. Bag, R. Aluguri and S. K. Ray  International Symposium on Semiconductor Materials and Devices ISSMD-2011 January 28-30, 2011 (2011)
  • ELECTROLUMINESCENCE CHARACTERISTICS OF Ge QD MOS LED DEVICE by R. Aluguri, S. Das, R. K. Singha, S. Manna, A. Dhar and S. K. Ray International Conference on Fiber Optics and Photonics December 12-15, photonics 2010 (2010)

Indian Institute of Technology, Kharagpur-721 302, INDIA
Telephone Number +91-3222-255221 | FAX : +91-3222-255303