Doctorates' Information System

     Souvik Kundu

Ph.D. fromIIT-Kharagpur - Materials Science
Supervisor(s)  Prof. Pallab Banerji
Ph.D. status  Joined in 2009 :: Completed in 2012
AddressJCB Hall, Room No. B-120, IIT Bombay (Present address)
Phone+919930435355
Emailsouvikelt@gmail.com
Formal Education
Exam / Degree Board / UnivBranchYear
M.Sc.Rajabajar Science College, Calcutta UniversityElectronics0000

Research Areas
  • III-V Semiconductor based MOS devices,
  • Quantum dots and memory devices
  • ZnO buffer, nanorods MOCVD growth, III-V semiconductor-MOCVD growth
  • High-k Dielectric

Skills
  • Quantum dots and epitaxial layer growth by MOCVD
  • Thinfilms using sol-gel and RF sputtering
  • Metal deposition by e-beam, thermal evaporation, RF-sputtering
  • Sample charecterizations by XPS, FESEM, AFM, EDS, PL, HRTEM, UV-VIS-NIR spectroscopy
  • Electrical measurement- Capacitance-Voltage, Conductance-Voltage, Current-Voltage (80-300 K), Hall
  • Semiconductor Device simulation by SILVACO
  • Measurements using- Agilents E4980 LCR, Keithley 4200 SCS, Keithley 2400, 6485, 2000, 2182A, 6221.
  • Photovoltaics (Inorganic/Organic based)

Awards
  • GATE (Discipline- EC)

Experience
  • Post-Doctoral Fellow at IIT Bombay since 2012
  • Completed Ph.D from IIT Kharagpur in 2012-2013

Teaching Experience
  • Semiconductor Device (M.Tech lab)(P) at IIT-Kharagpur 1semester (1 terms)

Fellowships / Scholarships
  • Institute fellowship for Post-Doctoral Research @ IIT Bombay (MHRD, Govt. of India)
  • Institute fellowship for pursuing Ph.D @ IIT Kharagpur (MHRD, Govt. of India)

Papers Published in Journals
  • GaAs metal/oxide/semiconductor device with titanium dioxide as dielectric layer,effect of oxide thickness on the device performance by S. Kundu, S. K. Roy, P. Banerji Journal of Physics D- Applied Physics Vol.44, pp.155104 (2011)
  • Studies on Al/ZrO2/GaAs Metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz to 1 MHz by S. Kundu, S. Roy, P. Banerji, S. Chakraborty, and T. Shripathi J. Vac. Sci. Technol. B Vol.29, pp.031203 (2011)
  • Interface engineering with an MOCVD grown ZnO layer for improved electrical characteristics in ZrO2-GaAs metal-oxide-semiconductor devices by S.Kundu,T.Shripathi, P.Banerji Solid State Communication Vol.151, pp.1881 (2011)
  • Charge storage properties of InP quantum dots in GaAs MOS based nonvolatile flash memory devices by Kundu, S., Halder, N. N., Biswas, P., Biswas, D., Banerji, P., Mukherjee, R., and Chakraborty, S. Applied Physics Letters 101, 212108 (2012)
  • Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing MOS capacitor by S.Kundu, N.N.Halder, D.Biswas, P. Banerji, T. Shripathi, and S. Chakroborty Journal of Applied Physics Vol.112, pp. 034514 (2012)
  • Interface studies on high-k/GaAs MOS capacitors by deep leve transient spectroscopy by S.Kundu, Y.Anitha, S.Chakroborty, P.Banerji J. Vac. Sci. Technol. B Vol.30, pp.51206 (2012)
  • Barrier modification and photovoltaic effect in GaAs based MIS diode by introducing MEH-PPV interfacial layer by S. Kundu, A. Kumar, S. Banerjee and P. Banerji Materials Science in Semiconductor Processings Vol.15, pp.386 (2012)
  • Catalyst free direct growth of InP quantum dots on Si by MOCVD, a step toward monolithic integration by Halder, N. N., Kundu, S., Mukherjee, R., Banerji, P., and Biswas, D. Journal of Nanoparticles Research, Springer 14, 1279 (2012)
  • Metal-oxide-semiconductor devices on GaAs with high-k dielectric and MOCVD grown ZnO interface passivation layer by S.Kundu, P.Banerji IEEE NSTSI 10.1109/NSTSI.2011.6111800 (2011)
  • A study on electrical transport vis a vis the effect of thermal annealing 3 on the p type conductivity in arsenic doped MOCVD grown ZnO in the temperature range 10 to 300 K by Biswas, P., Kundu, S., and Banerji, P. Journal of Alloys and compounds 552, 304 (2012)
  • Super rapid response of moisture sensor based on MOCVD grown ZnO nano tips array by Biswas, P., Kundu, S., Banerji, P., and Bhunia, S. Sensors and Actuators B (Accepted, In press) 10.1016/j.snb.2012.12.116 (2012)

Papers Presented at Conferences
  • Optical and electrical properties of GaAs based MIS device with potential applications in organic photovoltaics by S. Kundu, A. Kumar, S. Banerjee and P. Banerji ICCCD-2011 (IIT Kharagpur)_Oral presentation - (2011)
  • Interface engineering with MOCVD grown ZnO interface passivation layer for TiO2-GaAs metal-oxide-semiconductor devices by S.Kundu, P.Banerji The 15th International Symposium on the Physics of Semiconductor and Applications (Jeju, South Korea). Oral Presentation (2011)
  • Electrical properties of Al-MEH-PPV-p-GaAs hybrid MIS device- Application as temperature sensor by S.Kundu, S.Mangal, P.Biswas, P.Banerji IWPSD (IIT Kanpur) Poster presentation (2011)
  • Unpinning of GaAs metal-oxide-semiconductor devices- effect of interfacial engineering by S.Kundu, P.Banerji IWPSD (IIT Kanpur) Oral Presentation (2011)
  • OXIDE THICKNESS AND TEMPERATURE EFFECTS ON THE ELECTRICAL PROPERTIES OF Al/ZrO2/p-GaAs MOS DEVICE by S.Kundu, P.Banerji ICTAP (IIT Kharagpur) Poster presentation (2011)
  • Fabrication of GaAs Metal-Oxide-Semiconductor Devices- Effect of an Ultrathin Wide Bandgap Interface Passivation Layer (oral presentation-accepted) by S.Kundu, P.Banerji Molecular Materials Meeting (M3) @ Singapore. Oral Presentation (2012)

Indian Institute of Technology, Kharagpur-721 302, INDIA
Telephone Number +91-3222-255221 | FAX : +91-3222-255303