Doctorates' Information System

     Santanu Manna

Ph.D. fromIIT Kharagpur - Physics and Meteorology
Supervisor(s)  Prof. S K Ray
Ph.D. status  Joined in 2008 :: In progress
AddressRoom No C-206,JCB Hall of Residence,IIT Kharagpur
Phone+91-9775577930
Emailmannasan@gmail.com
Formal Education
Exam / Degree Board / UnivBranchYear
10WBBSEScience and Arts2001
12WBCHSEScience2003
B.Sc.Ramakrishna Mission Residential College(Narendrapur),University of CalcuttaPhysics2006
M.Sc.IIT KharagpurPhysics2008

Research Areas
  • Si and Ge based nano-electronics and nano-photonics

Skills
  • Deposition of Group IV materials (Si, Ge) by MBE
  • Deposition by Pulsed laser ablation
  • Deposition by RF sputtering
  • SiGe Nanowire preparation by VLS method
  • High resolution XRD
  • UV-Visible spectroscopy
  • photoluminescence experiments
  • Photoluminescence Decay measurement
  • Raman spectroscopy
  • Photodetection measurement
  • solar cell measurement
  • EQE measurement by Newport system
  • Electrical characterization by KEITHLEY 4200SCS
  • AFM characterization

Awards
  • Raha Foundation Scholarship(2003-2006)
  • CSIR Junior Research Fellowship(2008)
  • MCM scholarship(2006-2008)

Papers Published in Journals
  • Broadband Photoresponse and Rectification of Novel Graphene Oxide/n-Si Heterojunctions by R. Maity, S. Manna, A. Midya, and S. K. Ray Optics express revised (2013)
  • Optical photoresponse of CuS/n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching by A. K. Katiyar, A. K. Sinha, S. Manna, R. Aluguri and S. K. Ray Physical chemistry chemical physics communicated (2013)
  • Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5 /Si (100) substrate by R. Aluguri, S. Manna, and S. K. Ray xx communicated (2013)
  • Structural characteristics of Ge/virtual substrate Si0.5Ge0.5 by MBE by R. Aluguri, S. Manna, and S. K. Ray xx communicated (2013)
  • 1.54 um Electroluminescence from Ge/virtual substrate Si0.5Ge0.5 by MBE by S. Manna, R. Aluguri, and S. K. Ray Optics express under revision (2013)
  • MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device by S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H. J. Osten and S. K. Ray Nanotechnology revised (2013)
  • Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration by Amit Prakash, Siddheswar Maikap, Sheikh Ziaur Rahaman, Sandip Majumdar, Santanu Manna, and Samit K. Ray Nanoscale Research Letters 8, 220 (2013)
  • Effect of growth temperature and post deposition annealing on luminescence properties of single layer Ge nanoislands by S. Das, S. Manna, R. K. Singha, R. Aluguri and S. K. Ray Journal of Applied Physics 113, 063101 (2013)
  • Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires by S. Manna, N Prtljaga, S. Das, N. Daldosso, S. K. Ray and L Pavesi Nanotechnology 23, 065702 (2012)
  • High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates by S. Manna, S. Das, S Mondal, R. K. Singha and S. K. Ray Journal of Physical Chemistry C 116, 7126 (2012)
  • Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix by R. Aluguri, S. Das, S. Manna, R. K. Singha and S. K. Ray Optical Materials 34, 1430 (2012)
  • Optical and electrical properties of undoped and doped Ge nanocrystals by S. Das, R. Aluguri, S. Manna, R. K. Singha, A Dhar, L Pavesi and S. K. Ray Nanoscale Research Letters 7, 143 (2012)
  • Light emission and floating gate memory characteristics of germanium nanocrystals by S. Das, S. Manna, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray Physica status solidi A 208, 635 (2011)
  • Microstrustural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide by S. Das, R. K. Singha, S. Manna, S. Gangopadhyay, A. Dhar and S. K. Ray Journal of Nanoparticle Research 13, 587 (2011)
  • Structural and Optical Properties of Germaniun Nanostructures on Si (100) and Embedded in High-k Oxides by S. K. Ray, S. Das, R. K. Singha, S. Manna, A. Dhar Nanoscale Research Letters 6, 224 (2011)
  • Improved IR photoluminescence characteristics from circularly ordered self-assembled Ge islands by S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, S. K. Ray and A. Raychaudhuri Nanoscale Research Letters 6, 416 (2011)
  • Room temperature infrared photoresponse of self assembled Ge/Si(001)quantum dots grown by molecular beam epitaxy by R. K. Singha, S. Manna, S. Das, A Dhar and S K Ray Applied Physics Letters 96, 233113 (2010)
  • Ge based nanostructures for electronic and photonic devices by S. K. Ray, R. K. Singha, S. Das, S. Manna, and A. Dhar Microelectronics reliability  50, 674 (2010)

Papers Presented at Conferences
  • Si/Ge Nanowires and Radial Heterostructures for Photonic Devices by S. Manna and S. K. Ray IEEE INEC 2013, Sentosa, Singapore p. 63 (2013)
  • Growth and Photoluminescence Characteristics of Er-doped Ge Nanowires by S. Manna, S. Das, N. Prtljaga, R K Singha, Nicola Daldosso, Lorenzo Pavesi and S. K. Ray E-MRS 2010 Spring Meeting, Strasburg, France, June 7-11 xx (2010)

Indian Institute of Technology, Kharagpur-721 302, INDIA
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