Doctorates' Information System

     Samaresh Das

Ph.D. fromIndian Insitute of Technology Kharagpur - Physics and Meteorology
Supervisor(s)  Prof. S K Ray and Dr. A Dhar
Ph.D. status  Joined in 2006 :: In progress
AddressDept. of Physics, IIT Kharagpur, Kharagpur-721302, India
Phone+91-9476105751
Emailsamaresh.das@gmail.com
Formal Education
Exam / Degree Board / UnivBranchYear
10West Bengal Board of Secondary Education (WBBSE)Science, Arts1998
12West Bengal Council of Higher Secondary Education ( WBCHSE)Science2000
B.Sc.Midnapore College (Vidyasagar University)Physics2003
M.Sc.Indian Institute of Technology KharagpurPhysics2005

Research Areas
  • Experimental Condensed Matter Physics
  • SiGe based Nano-electronics and -photonics

Awards
  • CSIR Senior Research Fellowship (2008)
  • CSIR Junior Research Fellowship (2006)
  • GATE Fellowship in Physics (2006)
  • MCM Scholarship in M.Sc (2003 -2005)
  • JEST in Physics (2005)

Experience
  • Worked as a visiting PhD student for four months at the Dept. of Physics, University of Trento, Italy on Optical characterization of undoped and Er doped Ge nanocrystals

Teaching Experience
  • Optics, Mechanics, Quantum mechanics, Sound and Waves (Physics1)(T) at IIT Kharagpur 2006-2008 (2 terms)
  • Condensed Mater Physics, Optics, Electronics, B.Tech 1st Year lab(P) at IIT Kharagpur 2006-20010 (6 terms)

Fellowships / Scholarships
  • CSIR JRF/SRF
  • GATE Fellowship
  • MCM Scholarship

Papers Published in Journals
  • Ge based nanostructures for electronic and photonic devices by S.K. Ray , R.K. Singha, S. Das, S. Manna, A. Dhar Microelectronics reliability xxxx (2010)
  • Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy by R K Singha, S Das, A Dhar, S K Lahiri, and S K Ray Nanoscience and Nanotechnology Letters Vol. 1pp. 1-5 (2009)
  • Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices by S Das, R K Singha, K Das, A Dhar, and S K Ray Journal of Nanoscience and Nanotechnology Vol. 9 pp. 5484 (2009)
  • Properties of self-assembled Ge Islands grown by molecular beam epitaxy by S K Ray, R K Singha, S Das, K Das, A Dhar International J. Nanoechnology Vol. 6 pp. 552 (2009)
  • Evolution of strain and composition of Ge islands o Si(001) grown by molecular beam epitaxy during postgrowth annealing by R K Singha, S Das, S Majumder, K Das, A Dhar, and S K Ray J. Applied Physics Vol. 103 pp. 114301 (2008)
  • Shape and size distribution of MBE grown self-assembled Ge islands on Si (001) substrates by R K Singha, S Das, K Das, S Majumder,A Dhar, and S K Ray J. Nanoscience and Nanotechnology Vol. 8 pp. 4101 (2008)
  • Memory effect in junction-like CdS nanocomposites conducting polymer poly (2-ethoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene) heterostructure by S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray Nanotechnology Vol. 19 pp. 215306 (2008)
  • Characteristics of Ge nanocrystals grown by RF magnetron sputtering by R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray Advanced Materials Research Vol. 31 pp. 89 (2008)
  • Improved Charge Storage Characteristics of Ge Nanocrystals Embedded In Hafnium Oxide by S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray Applied Physics Letter Vol. 91 pp. 233118 (2007)
  • Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy by V S Reddy, S Das, S K Ray and A Dhar J. Phys. D Appl. Phys. Vol. 40 pp. 7687 (2007)

Papers Presented at Conferences
  • Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix by S. Das, R. K. Singha, A. Dhar and S. K. Ray 1st Intl. Workshop on Si based nano-electronics and photonics, Vigo, Spain xxxx (2009)

Indian Institute of Technology, Kharagpur-721 302, INDIA
Telephone Number +91-3222-255221 | FAX : +91-3222-255303