Doctorates' Information System

     Debashis Panda

Ph.D. fromIndian Institute of Technology, Kharagpur - Department of Physics and Meteorology
Supervisor(s)  Prof. S. K. Ray and Dr. A. Dhar
Ph.D. status  Joined in 2006 :: Completed in 2011
AddressElectrical and Computer Engineering Dept., 36 Wasatch Dr. Room no.-3620, Salt Lake City, UT- 84112, USA.
Phone+1 801 231 8656
Emailphy.dpanda@gmail.com
Formal Education
Exam / Degree Board / UnivBranchYear
10West Bengal Board of Secondary EducationScience, Arts and Languages1994
12West Bengal Council of Higher Secondary EducationScience1997
B.Sc.Vidyasagar UniversityPhysics (Honours)2000
M.Sc.Guru Ghasidas UniversityElectronics2002

Research Areas
  • Semiconductor device, processing and characterization technology
  • Fabrication of non-volatile flash memory devices using metal nanocrystal
  • Fabrication of nonvolatile resistive switching memory
  • Metal silicide and metal germanide gate electrode and Schottky diode
  • Solar cell based on semiconductor sencitized porous TiO2

Skills
  • Class 10 clean room activities for silicon processing
  • Thin film deposition, Pulse Laser Deposition, RF sputtering, E-beam evaporator, MBE, CVD
  • Reactive Ion Etching (RIE) and PECVD system
  • Lithography for device fabrication
  • Hands on experience on XRD, XPS, RBS, AFM, HRTEM, FESEM
  • Electrical I-V and C-V measurement using HP 4284, HP 4285, HP 4156C and Keithly 4100, 4200-SCS

Awards
  • National University Singapore, Singapore, 2014
  • University of Utah Post Doctoral Fellowship, 2013-2014
  • NSC, Post Doctoral Fellowship 2011-2013 at Taiwan
  • Senior Research Fellowship from CSIR, New Delhi.

Experience
  • Post Doctoral Fellow at Dept of Electrical and Computer Engg., National University of Singapore, Singapore from March 2014 to till now.
  • Post Doctoral Fellow at Dept of Electrical and Computer Engg., University of Utah,TSalt Lake City, USA from September 2013 to Feb 2014..
  • Post Doctoral Fellow at Dept of Electronics Engg., National Chiao Tung University,Taiwan from August 2011 to August 2013.
  • Research Scholar at Dept. of Physics and Meteorology, IIT Kharagpur from January 2005 to August 2011.
  • Research assistance at Dept of Electronic Engg., Chang Gung University,Taiwan from March 2007 to Dec 2007
  • Research experiences in Jadavpur University from Jan 2004 to Dec 2004.

Teaching Experience
  • Condensed Matter Physics (BTech)(P) at Indian Institute of Technology, Kharagpur 2007-2009 (5 terms)
  • Condensed Matter Physics (M. Sc)(P) at Indian Institute of Technology, Kharagpur 2007-2009 (5 terms)
  • Electronics (BSc)(L) at Contai Prabhat Kumar College, Vidyasagar University November 2002 - December 2004 (3 terms)
  • Electronics (BSc)(P) at Contai Prabhat Kumar College, Vidyasagar University November 2002 - December 2004 (3 terms)

Fellowships / Scholarships
  • National University of Singapore, Post Doctoral Fellowship
  • University of Utah, Post Doctoral Fellowship at USA
  • NSC, Post Doctoral Fellowship at Taiwan
  • SRF (Individual) from CSIR, New Delhi
  • SPA, from SCM project sponsored by DST, New Delhi
  • Research Assistant from CBRAM project sponsored by ITRI, Taiwan at Chang Gung University
  • SPA, from DMB project sponsored by DRDO, New Delhi
  • JPA, from DMB project sponsored by DRDO, New Delhi

Papers Published in Journals
  • Optical characteristics of Er3 doped Ge nanocrystals in sol-gel derived SiO2 glass by K. Das, V. Nagarajan, M.L. NandaGoswami, D. Panda, A. Dhar and S.K. Ray Nanotechnology 18, 095704 1-5 (2007)
  • Characteristics of DC Magnetron Sputtered Ternary Cobalt-Nickel Silicide Thin Films for Ultra Shallow Junction Devices by D. Panda, A. Dhar and S.K. Ray Microelectronic Engineering 85, 559-565 (2008)
  • Synthesis and Characterization of Nickel Titanium Melt-spun Ribbon for Micro-actuator Device Application by D. Panda, M. Ranot, K. Das, D. Bhattacharya, A. Dhar, M. Chakraborty and S. K. Ray Indian Journal of Engineering and Materials Sciences 15(2), 95-98 (2008)
  • Fabrication and Schottky Barrier Characterization of Cobalt-Nickel Silicide/n-Si Schottky Diodes for Scaled-Si CMOS Applications by Debashis Panda, Achintya Dhar and Samit K. Ray IEEE Transaction on Electron Devices 55(9), 2403-2408 (2008)
  • Memory characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barrier by D. Panda, S. Maikap, A. Dhar and S. K. Ray Electrochemical and Solid-State Letter 12(1), H7-H10 (2009)
  • Improved charge storage characteristics of nickel nanocrystals embedded in high k dielectric for flash memory devices by D. Panda, A. Dhar and S.K. Ray Semiconductor Science and Technology 24, 115020 (2009)
  • Nonvolatile and Unipolar Resistive Switching Characteristics of Pulsed Laser Ablated NiO Films by D. Panda, A. Dhar and S.K. Ray Journal of Applied Physics 108, 104513 1-7 (2010)
  • Non-volatile Memristive Switching Characteristics of TiO2 Films Embedded With Nickel Nanocrystals by Debashis Panda, Achintya Dhar and Samit K. Ray IEEE Trans. Nanotechnology 11(1), pp.-51-55 (2012)
  • Resistive Switching Characteristics of Nickel-Silicide layer Embedded HfO2 Film by Debashis Panda, Chun-Yang Huang and Tseung-Yuen Tseng Applied Physics Letter 100, 112901 1-112901 5 (2012)
  • Enhanced Charge Storage Characteristics of Nickel Nanocrystals Embedded Flash Memory Structures by Sounak K. Ray, Debashis Panda and Rakesh Aluguri Journal of Experimental Nanoscience iFirst, pp.-1-7 (2012)
  • Critical review-Growth, dielectric properties, and memory device applications of ZrO2 thin films by Debashis Panda and Tseung-Yuen Tseng Thin Solid Films 531, 1-20 (2013)
  • Review- One-dimensional ZnO Nanostructures- Fabrication, Opto-electronic Properties, and Device Applications by Debashis Panda, and Tseung-Yuen Tseng Journal of Materials Science 48(20), 6849-6877 (2013)
  • Improvement of Resistive Switching Properties of Ti/ZrO2/Pt with Embedded Germanium by Chun-An Lin, Debashis Panda and Tseung-Yuen Tseng Advances in Multifunctional Materials and Systems II- Ceramic Transactions Volume 245, Chapter 10, pp. 111-116 (2014)
  • Forming-free bipolar resistive switching in nonstoichiometric ceria films by M. Ismail, C.Y. Huang, D. Panda, C.J. Hung, T.L. Tsai, J.H. Jieng, C.A. Lin, U. Chand, A.M. Rana, E. Ahmed, I. Talib, M.Y. Nadeem, and T.Y. Tseng Nanoscale Research Letters 9, 45 (2014)
  • Perovskite oxides as resistive switching memories- a review by Debashis Panda and Tseung-Yuen Tseng Ferroelectrics 471(1), 23-64 (2014)

Papers Presented at Conferences
  • Wet-chemical synthesis of p-type gamma-Na0.71Co0.96O2 powder and its characterization by D. Panda, A.N. Banerjee, S. Saha and K.K. Chattopadhyay International Symposium on Advanced Materials and Processing (ISAMAP2K4), Kharagpur, India 507-512 (2004)
  • Fabrication of p-CuAlO2/n-ZnO-Al heterojunction diodes for transparent electronics by A.N. Banerjee, D. Panda and K.K. Chattopadhyay Seventh International Conference on Optoelectronics, Fiber Optics and Photonics (Photonics-2004), Cochin, India -- -- (2004)
  • Electrical and Structural Characteristics of Cobalt-Nickel-Silicide Thin Films For Ultrashallow Junction Devices by D. Panda, A. Basar, A. Dhar and S.K. Ray Thirteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2005), New Delhi, India 695-700 (2005)
  • Electro-Optical Characterization of gamma-Na0.71Co0.96O2 Powder Synthesized by Chemical Route by D. Panda, S. Jana and K.K. Chattopadhyay Thirteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2005), New Delhi, India 1436-1440 (2005)
  • Fabrication of CoxNi1-xSi2/n-Si junction Schottky diode for ULSI device applications by D. Panda, K. Das, A. Dhar and S.K. Ray International Conference on Computers and Devices for Communications (CODEC-2006), Kolkata, India 323-326 (2006)
  • Growth of Nickel Germanides on MBE Grown Ge films for High Mobility Devices by D. Panda, K. Das, R.K. Singha, S. Das, A. Dhar and S.K. Ray International Conference on Computers and Devices for Communications (CODEC-2006), Kolkata, India 1-4 (2006)
  • Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale non-volatile memory device applications by T.-Y. Wang, S. Maikap, P.J. Tzeng, D. Panda, L.S. Lee, M.-J. Tsai and J.-R. Yang 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan 464-465 (2007)
  • Resistive Switching Memory Using High-k Ta2O5 Films by Y. R. Tsai, S. Maikap, D. Panda, S. Z. Rahaman, C. S. Lai, P. J. Tzeng, C. H. Lin, T. C. Tien, T. Y. Wu, C. C. Wang, M. J. Kao and M. J. Tsai 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan 906-907 (2008)
  • Fabrication of p-CuAlO2/n-ZnO-Al heterojunction diodes for transparent electronics by Ayan Ray, Debashis Panda, Tamita Rakshit, Sanjay K. Mandal, Indranil Manna, and Samit K. Ray IEEE International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), IIT-Mumbai, India 1-4 (2009)
  • Non-volatile Unipolar Memristive Switching Mechanism of Pulse Laser Ablated NiO Films by Debashis Panda, Achintya Dhar and Samit K. Ray IEEE International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), IIT-Mumbai, India 1-5 (2009)
  • Charge Storage Memory Characteristics of Tetralayer Flash Memory Structures Using NiGe Nanocrystals by D. Panda, A. Dhar, S. Maikap and S.K. Ray  International Conference on Advanced Nanomaterials and Nanotechnology (ICANN-2009), IIT Guwahati -- -- (2009)
  • Synthesis and Characterization of TiO2 Nanotubes for Photovoltaic Applications by P. Bose, D. Panda, A. Dhar and S.K. Ray IEEE Fifteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2009), New Delhi, India -- -- (2009)
  • Improved Resistive Switching Characteristics of Nickel Nanocrystals Embedded TiO2 Films by Debashis Panda, Achintya Dhar and Samit K. Ray International Conference on Communication, Computers and Devices (ICCCD-2010) 1-5 (2010)
  • Memristive Switching Characteristics of Ni Nanocrystals Embedded TiO2 Films by D. Panda, A. Dhar and S.K. Ray IEEE IEEE International NanoElectronics. Conference (2011 INEC) --- (2011)
  • Bipolar and Unipolar Resistive Switching of Cobalt Nanocrystals Embedded ZrO2 Based Memory Capacitors by Ming-Chi Wu, Debashis Panda, Tsung-Han Wu, and Tseung-Yuen Tseng IEEE IEDMS 2011 -- (2011)
  • ENHANCED CHARGE STORAGE CHARACTERISTICS OF NICKEL NANOCRYSTALS EMBEDDED FLASH MEMORY STRUCTURES by Sounak Ray, Debashis Panda and Rakesh Alugiri 2nd International Conference on Advanced Nanomaterials and Nanotechnology (ICANN-2011) -- (2011)
  • Improved Resistive switching characteristics in ultrathin NiSi layer embedded HfO2 film by Debashis Panda, Chun-Yang Huang, Chung-Jung Hung, Pang Lin and Tseung-Yuen Tseng International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN), at Delhi University, New Delhi, India 529-530 (2012)
  • Resistive Switching Memory Characteristics of Pt-TiO2-Ni-nc-TiO2-Pt Structures by D. Panda, A. Dhar and S.K. Ray International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN), at Delhi University, New Delhi, India pp. 258-259 (2012)
  • Resistive Switching Memory Characteristics of Nickel-Silicide Nanocrystals Embedded HfO2 Film by Debashis Panda, Chun-Yang Huang and Tseung-Yuen Tseng 221st ECS Meeting, Seattle, Washington, USA -- (2012)
  • Improve Resistive Switching Characteristics in Mixed HfO2 and Al2O3 Layer by Layer Structure by Chun-Yang Huang, Ming-Chi Wu, Debashis Panda, and Tseung-Yuen Tseng 221st ECS Meeting, Seattle, Washington, USA -- (2012)
  • Improvement of resistive switching properties of Ti/ZrO2/Pt with embedded Germanium by Chun-An Lin, Debashis Panda, Tseung-Yuen Tseng 10th Pacific Rim Conference on Ceramic and Glass Technology, San Diego, CA, USA -- (2013)
  • Recent Activities on ZrO2 Based Resistive Switching Memory Devices-Keynote by Debashis Panda, Chun- Yang Huang and Tseung-Yuen Tseng 7-th International Conference on Materials for Advanced Technologies (ICMAT 2013), Suntec Singapore -- (2013)

Indian Institute of Technology, Kharagpur-721 302, INDIA
Telephone Number +91-3222-255221 | FAX : +91-3222-255303